Activation energy of thermal oxidation germanium oxide on germanium substrates

N. A.A. Halim, S. K. Sahari, Azrul Azlan Hamzah, Burhanuddin Yeop Majlis, S. Marini, L. Hasanah, M. Kashif

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The activation energy of GeO2 was studied by determining the oxide thickness versus temperature from lower to higher oxidation temperature in the range between 450°C and 600°C. It was found that a linear relationship can be obtained between oxidation time and oxide thickness for the oxidation temperature between 450 and 575°C while for the 600°C oxidation, a linear relationship can be obtained for the shorter oxidation time. The rate of oxidation increased until 0.55 and abruptly decreased after increasing oxidation temperature to 600°C which implies that the oxygen intermixing occurs during higher oxidation (600°C) rather that diffusion mechanism that leads to the lower activation energy.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages169-172
Number of pages4
Volume2018-August
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 3 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/8/1817/8/18

Fingerprint

Germanium oxides
Germanium
Activation energy
Oxidation
Substrates
Oxides
Thermooxidation
Hot Temperature
germanium oxide
Temperature
Oxygen

Keywords

  • activation energy
  • Ge oxidation
  • GeO desorption
  • GeO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Halim, N. A. A., Sahari, S. K., Hamzah, A. A., Yeop Majlis, B., Marini, S., Hasanah, L., & Kashif, M. (2018). Activation energy of thermal oxidation germanium oxide on germanium substrates. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (Vol. 2018-August, pp. 169-172). [8481204] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481204

Activation energy of thermal oxidation germanium oxide on germanium substrates. / Halim, N. A.A.; Sahari, S. K.; Hamzah, Azrul Azlan; Yeop Majlis, Burhanuddin; Marini, S.; Hasanah, L.; Kashif, M.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. p. 169-172 8481204.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Halim, NAA, Sahari, SK, Hamzah, AA, Yeop Majlis, B, Marini, S, Hasanah, L & Kashif, M 2018, Activation energy of thermal oxidation germanium oxide on germanium substrates. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. vol. 2018-August, 8481204, Institute of Electrical and Electronics Engineers Inc., pp. 169-172, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/8/18. https://doi.org/10.1109/SMELEC.2018.8481204
Halim NAA, Sahari SK, Hamzah AA, Yeop Majlis B, Marini S, Hasanah L et al. Activation energy of thermal oxidation germanium oxide on germanium substrates. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August. Institute of Electrical and Electronics Engineers Inc. 2018. p. 169-172. 8481204 https://doi.org/10.1109/SMELEC.2018.8481204
Halim, N. A.A. ; Sahari, S. K. ; Hamzah, Azrul Azlan ; Yeop Majlis, Burhanuddin ; Marini, S. ; Hasanah, L. ; Kashif, M. / Activation energy of thermal oxidation germanium oxide on germanium substrates. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. pp. 169-172
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