Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models

Muhammad Faiz Bukhori, Noor Ain Kamsani, Asen Asenov, Nazrul Anuar Nayan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit. We present a framework that integrates the statistical aspect of the NBTI/PBTI degradation, obtained from large-scale 3D 'atomistic' device simulations, into statistical compact models. Through a selection of physically relevant compact model parameters, the resulting library of compact models provides high accuracy in representing the statistical NBTI/PBTI degradation effects, across a wide range of degradation conditions. This approach enables circuit designers to verify to what extent particular design solutions will meet the design specifications subject to progressive BTI degradation in the presence of statistical variability.

Original languageEnglish
Pages (from-to)793-801
Number of pages9
JournalMicroelectronics Journal
Volume43
Issue number11
DOIs
Publication statusPublished - Nov 2012

Fingerprint

degradation
Degradation
Charge trapping
figure of merit
specifications
field effect transistors
trapping
4-nitrobenzylthioinosine
Negative bias temperature instability
Specifications
Networks (circuits)
simulation

Keywords

  • BTI
  • Compact model
  • Degradation
  • MOSFET
  • Reliability
  • Variability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models. / Bukhori, Muhammad Faiz; Kamsani, Noor Ain; Asenov, Asen; Nayan, Nazrul Anuar.

In: Microelectronics Journal, Vol. 43, No. 11, 11.2012, p. 793-801.

Research output: Contribution to journalArticle

@article{5211f820a58f4ebe87854c7e6fdeb34c,
title = "Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models",
abstract = "In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit. We present a framework that integrates the statistical aspect of the NBTI/PBTI degradation, obtained from large-scale 3D 'atomistic' device simulations, into statistical compact models. Through a selection of physically relevant compact model parameters, the resulting library of compact models provides high accuracy in representing the statistical NBTI/PBTI degradation effects, across a wide range of degradation conditions. This approach enables circuit designers to verify to what extent particular design solutions will meet the design specifications subject to progressive BTI degradation in the presence of statistical variability.",
keywords = "BTI, Compact model, Degradation, MOSFET, Reliability, Variability",
author = "Bukhori, {Muhammad Faiz} and Kamsani, {Noor Ain} and Asen Asenov and Nayan, {Nazrul Anuar}",
year = "2012",
month = "11",
doi = "10.1016/j.mejo.2012.07.004",
language = "English",
volume = "43",
pages = "793--801",
journal = "Microelectronics",
issn = "0026-2692",
publisher = "Elsevier Limited",
number = "11",

}

TY - JOUR

T1 - Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models

AU - Bukhori, Muhammad Faiz

AU - Kamsani, Noor Ain

AU - Asenov, Asen

AU - Nayan, Nazrul Anuar

PY - 2012/11

Y1 - 2012/11

N2 - In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit. We present a framework that integrates the statistical aspect of the NBTI/PBTI degradation, obtained from large-scale 3D 'atomistic' device simulations, into statistical compact models. Through a selection of physically relevant compact model parameters, the resulting library of compact models provides high accuracy in representing the statistical NBTI/PBTI degradation effects, across a wide range of degradation conditions. This approach enables circuit designers to verify to what extent particular design solutions will meet the design specifications subject to progressive BTI degradation in the presence of statistical variability.

AB - In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit. We present a framework that integrates the statistical aspect of the NBTI/PBTI degradation, obtained from large-scale 3D 'atomistic' device simulations, into statistical compact models. Through a selection of physically relevant compact model parameters, the resulting library of compact models provides high accuracy in representing the statistical NBTI/PBTI degradation effects, across a wide range of degradation conditions. This approach enables circuit designers to verify to what extent particular design solutions will meet the design specifications subject to progressive BTI degradation in the presence of statistical variability.

KW - BTI

KW - Compact model

KW - Degradation

KW - MOSFET

KW - Reliability

KW - Variability

UR - http://www.scopus.com/inward/record.url?scp=84866731799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866731799&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2012.07.004

DO - 10.1016/j.mejo.2012.07.004

M3 - Article

AN - SCOPUS:84866731799

VL - 43

SP - 793

EP - 801

JO - Microelectronics

JF - Microelectronics

SN - 0026-2692

IS - 11

ER -