Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures

K. B. Wong, Geri Kibe Gopir, J. P. Hagon, M. Jaros

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present full-scale calculations of the optical absorption coefficient of a type-II InAs-AlGaSb superlattice at wavelengths around 10 μm. We show that the optical matrix element responsible for such infrared absorption depends on a delicate balance between the electron-hole wavefunction overlap and the structural parameters. We also present a full description of the effect of electric-field-induced localization on optical spectra in this range of wavelengths.

Original languageEnglish
Pages (from-to)2210-2216
Number of pages7
JournalSemiconductor Science and Technology
Volume9
Issue number12
DOIs
Publication statusPublished - Dec 1994
Externally publishedYes

Fingerprint

Semiconductor quantum wells
absorptivity
Electric fields
quantum wells
Wavelength
electric fields
Infrared absorption
Wave functions
wavelengths
Light absorption
infrared absorption
optical spectrum
optical absorption
Electrons
matrices
indium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures. / Wong, K. B.; Gopir, Geri Kibe; Hagon, J. P.; Jaros, M.

In: Semiconductor Science and Technology, Vol. 9, No. 12, 12.1994, p. 2210-2216.

Research output: Contribution to journalArticle

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