Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared

Chris J. Hunter, Faebian Bastiman, Abdul Rahman Mohmad, Robert Richards, Jo Shien Ng, Stephen J. Sweeney, John P R David

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The absorption properties of a series of GaAs1?xBi x/GaAs layers with ∼ Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1?xBix/GaAs layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μ. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).

Original languageEnglish
Article number6334417
Pages (from-to)2191-2194
Number of pages4
JournalIEEE Photonics Technology Letters
Volume24
Issue number23
DOIs
Publication statusPublished - 2012
Externally publishedYes

Fingerprint

Tailings
Photocurrents
Molecular beam epitaxy
Diodes
Energy gap
Photons
diodes
Infrared radiation
absorptivity
p-i-n diodes
photocurrents
molecular beam epitaxy
photons
gallium arsenide
energy

Keywords

  • GaAsBi
  • molecular beam epitaxy (MBE)
  • p-i-n photodiodes
  • responsivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Hunter, C. J., Bastiman, F., Mohmad, A. R., Richards, R., Ng, J. S., Sweeney, S. J., & David, J. P. R. (2012). Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared. IEEE Photonics Technology Letters, 24(23), 2191-2194. [6334417]. https://doi.org/10.1109/LPT.2012.2225420

Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared. / Hunter, Chris J.; Bastiman, Faebian; Mohmad, Abdul Rahman; Richards, Robert; Ng, Jo Shien; Sweeney, Stephen J.; David, John P R.

In: IEEE Photonics Technology Letters, Vol. 24, No. 23, 6334417, 2012, p. 2191-2194.

Research output: Contribution to journalArticle

Hunter, CJ, Bastiman, F, Mohmad, AR, Richards, R, Ng, JS, Sweeney, SJ & David, JPR 2012, 'Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared', IEEE Photonics Technology Letters, vol. 24, no. 23, 6334417, pp. 2191-2194. https://doi.org/10.1109/LPT.2012.2225420
Hunter, Chris J. ; Bastiman, Faebian ; Mohmad, Abdul Rahman ; Richards, Robert ; Ng, Jo Shien ; Sweeney, Stephen J. ; David, John P R. / Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared. In: IEEE Photonics Technology Letters. 2012 ; Vol. 24, No. 23. pp. 2191-2194.
@article{b684c3a70f3644278abaac035136330e,
title = "Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared",
abstract = "The absorption properties of a series of GaAs1?xBi x/GaAs layers with ∼ Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1?xBix/GaAs layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μ. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).",
keywords = "GaAsBi, molecular beam epitaxy (MBE), p-i-n photodiodes, responsivity",
author = "Hunter, {Chris J.} and Faebian Bastiman and Mohmad, {Abdul Rahman} and Robert Richards and Ng, {Jo Shien} and Sweeney, {Stephen J.} and David, {John P R}",
year = "2012",
doi = "10.1109/LPT.2012.2225420",
language = "English",
volume = "24",
pages = "2191--2194",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "23",

}

TY - JOUR

T1 - Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared

AU - Hunter, Chris J.

AU - Bastiman, Faebian

AU - Mohmad, Abdul Rahman

AU - Richards, Robert

AU - Ng, Jo Shien

AU - Sweeney, Stephen J.

AU - David, John P R

PY - 2012

Y1 - 2012

N2 - The absorption properties of a series of GaAs1?xBi x/GaAs layers with ∼ Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1?xBix/GaAs layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μ. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).

AB - The absorption properties of a series of GaAs1?xBi x/GaAs layers with ∼ Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1?xBix/GaAs layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μ. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).

KW - GaAsBi

KW - molecular beam epitaxy (MBE)

KW - p-i-n photodiodes

KW - responsivity

UR - http://www.scopus.com/inward/record.url?scp=84870439138&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870439138&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2225420

DO - 10.1109/LPT.2012.2225420

M3 - Article

VL - 24

SP - 2191

EP - 2194

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 23

M1 - 6334417

ER -