A uniformity study of PECVD SiQ 2 using IPL 2000 E/D

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The uniformity of a silicon dioxide as a passivation layer deposited by PECVD IPL 2000 E/D was studied. A four inch wafer was used for the deposition using the PECVD technique with two reactant gases, silane (SiH 4) and nitrus oxide (N 20) with substrate temperature of 300 °C. Four samples were deposited at different times: 5, 10, 15 and 20 minutes. The deposited oxide thickness and its respective refractive index were measured using an ellipsometer and plotted against the deposition time. The deposition parameters were also observed and reported.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages217-222
Number of pages6
Publication statusPublished - 2000
Event2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000 - Port Dickson
Duration: 13 Nov 200015 Nov 2000

Other

Other2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000
CityPort Dickson
Period13/11/0015/11/00

Fingerprint

Plasma enhanced chemical vapor deposition
Oxides
Silanes
Passivation
Silicon Dioxide
Refractive index
Gases
Silica
Substrates
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bais, B., Abdul Ghafar, B., & Yeop Majlis, B. (2000). A uniformity study of PECVD SiQ 2 using IPL 2000 E/D. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 217-222). [932466]

A uniformity study of PECVD SiQ 2 using IPL 2000 E/D. / Bais, Badariah; Abdul Ghafar, B.; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. p. 217-222 932466.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bais, B, Abdul Ghafar, B & Yeop Majlis, B 2000, A uniformity study of PECVD SiQ 2 using IPL 2000 E/D. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 932466, pp. 217-222, 2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000, Port Dickson, 13/11/00.
Bais B, Abdul Ghafar B, Yeop Majlis B. A uniformity study of PECVD SiQ 2 using IPL 2000 E/D. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. p. 217-222. 932466
Bais, Badariah ; Abdul Ghafar, B. ; Yeop Majlis, Burhanuddin. / A uniformity study of PECVD SiQ 2 using IPL 2000 E/D. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. pp. 217-222
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