A simple thermal oxidation technique and KOH wet etching process for fuel cell flow field fabrication

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The relatively inexpensive SiO2 layer was studied as the silicon etch mask in a KOH etching process for the fabrication of a flow field pattern that consists of channels as well as through-holes on the substrate of a fuel cell. The SiO2 layer was grown in a wet thermal oxidation process to obtain a thickness of up to 6.5 μm and the growth was predicted using the Deal-Grove model. The flow fields on the cathode and anode sides were done using a wet etch process with KOH as etchant. Etching time was utilized to control the depth of the required pattern and the pattern shape was found to have an influence over the etch rate. With constant monitoring of the conditions and parameters used throughout the micro-fabrication process, the thick SiO 2 layer was found to be a reliable masking material for a long KOH etching.

Original languageEnglish
Pages (from-to)5136-5142
Number of pages7
JournalInternational Journal of Hydrogen Energy
Volume36
Issue number8
DOIs
Publication statusPublished - Apr 2011

Fingerprint

Wet etching
fuel cells
Fuel cells
Etching
Flow fields
flow distribution
etching
Fabrication
Oxidation
oxidation
fabrication
etchants
Microfabrication
masking
Masks
Anodes
Cathodes
anodes
masks
cathodes

Keywords

  • Etch mask
  • Fuel cell
  • KOH wet etch
  • SiO layer
  • Wet thermal oxidation

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

Cite this

@article{934e3c1836d04f57a008e45f0a31ebc6,
title = "A simple thermal oxidation technique and KOH wet etching process for fuel cell flow field fabrication",
abstract = "The relatively inexpensive SiO2 layer was studied as the silicon etch mask in a KOH etching process for the fabrication of a flow field pattern that consists of channels as well as through-holes on the substrate of a fuel cell. The SiO2 layer was grown in a wet thermal oxidation process to obtain a thickness of up to 6.5 μm and the growth was predicted using the Deal-Grove model. The flow fields on the cathode and anode sides were done using a wet etch process with KOH as etchant. Etching time was utilized to control the depth of the required pattern and the pattern shape was found to have an influence over the etch rate. With constant monitoring of the conditions and parameters used throughout the micro-fabrication process, the thick SiO 2 layer was found to be a reliable masking material for a long KOH etching.",
keywords = "Etch mask, Fuel cell, KOH wet etch, SiO layer, Wet thermal oxidation",
author = "Hasran, {Umi Azmah} and Kamarudin, {Siti Kartom} and {Wan Daud}, {Wan Ramli} and {Yeop Majlis}, Burhanuddin and Mohamad, {Abu Bakar} and Kadhum, {Abdul Amir H.}",
year = "2011",
month = "4",
doi = "10.1016/j.ijhydene.2011.01.043",
language = "English",
volume = "36",
pages = "5136--5142",
journal = "International Journal of Hydrogen Energy",
issn = "0360-3199",
publisher = "Elsevier Limited",
number = "8",

}

TY - JOUR

T1 - A simple thermal oxidation technique and KOH wet etching process for fuel cell flow field fabrication

AU - Hasran, Umi Azmah

AU - Kamarudin, Siti Kartom

AU - Wan Daud, Wan Ramli

AU - Yeop Majlis, Burhanuddin

AU - Mohamad, Abu Bakar

AU - Kadhum, Abdul Amir H.

PY - 2011/4

Y1 - 2011/4

N2 - The relatively inexpensive SiO2 layer was studied as the silicon etch mask in a KOH etching process for the fabrication of a flow field pattern that consists of channels as well as through-holes on the substrate of a fuel cell. The SiO2 layer was grown in a wet thermal oxidation process to obtain a thickness of up to 6.5 μm and the growth was predicted using the Deal-Grove model. The flow fields on the cathode and anode sides were done using a wet etch process with KOH as etchant. Etching time was utilized to control the depth of the required pattern and the pattern shape was found to have an influence over the etch rate. With constant monitoring of the conditions and parameters used throughout the micro-fabrication process, the thick SiO 2 layer was found to be a reliable masking material for a long KOH etching.

AB - The relatively inexpensive SiO2 layer was studied as the silicon etch mask in a KOH etching process for the fabrication of a flow field pattern that consists of channels as well as through-holes on the substrate of a fuel cell. The SiO2 layer was grown in a wet thermal oxidation process to obtain a thickness of up to 6.5 μm and the growth was predicted using the Deal-Grove model. The flow fields on the cathode and anode sides were done using a wet etch process with KOH as etchant. Etching time was utilized to control the depth of the required pattern and the pattern shape was found to have an influence over the etch rate. With constant monitoring of the conditions and parameters used throughout the micro-fabrication process, the thick SiO 2 layer was found to be a reliable masking material for a long KOH etching.

KW - Etch mask

KW - Fuel cell

KW - KOH wet etch

KW - SiO layer

KW - Wet thermal oxidation

UR - http://www.scopus.com/inward/record.url?scp=79953669497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953669497&partnerID=8YFLogxK

U2 - 10.1016/j.ijhydene.2011.01.043

DO - 10.1016/j.ijhydene.2011.01.043

M3 - Article

AN - SCOPUS:79953669497

VL - 36

SP - 5136

EP - 5142

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

SN - 0360-3199

IS - 8

ER -