A review on modeling the channel potential in multi-gate mosfets

Hossein Mohammadi, Huda Abdullah, Chang Fu Dee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.

Original languageEnglish
Pages (from-to)861-866
Number of pages6
JournalSains Malaysiana
Volume43
Issue number6
Publication statusPublished - 2014

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Physics
Analytical models
Networks (circuits)

Keywords

  • Multi-gate soi mosfets
  • Natural channel length
  • Potential distribution
  • Short channel effects

ASJC Scopus subject areas

  • General

Cite this

A review on modeling the channel potential in multi-gate mosfets. / Mohammadi, Hossein; Abdullah, Huda; Dee, Chang Fu.

In: Sains Malaysiana, Vol. 43, No. 6, 2014, p. 861-866.

Research output: Contribution to journalArticle

@article{eabbe57471ae406497d696a66a96f264,
title = "A review on modeling the channel potential in multi-gate mosfets",
abstract = "This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.",
keywords = "Multi-gate soi mosfets, Natural channel length, Potential distribution, Short channel effects",
author = "Hossein Mohammadi and Huda Abdullah and Dee, {Chang Fu}",
year = "2014",
language = "English",
volume = "43",
pages = "861--866",
journal = "Sains Malaysiana",
issn = "0126-6039",
publisher = "Penerbit Universiti Kebangsaan Malaysia",
number = "6",

}

TY - JOUR

T1 - A review on modeling the channel potential in multi-gate mosfets

AU - Mohammadi, Hossein

AU - Abdullah, Huda

AU - Dee, Chang Fu

PY - 2014

Y1 - 2014

N2 - This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.

AB - This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.

KW - Multi-gate soi mosfets

KW - Natural channel length

KW - Potential distribution

KW - Short channel effects

UR - http://www.scopus.com/inward/record.url?scp=84902517104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902517104&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84902517104

VL - 43

SP - 861

EP - 866

JO - Sains Malaysiana

JF - Sains Malaysiana

SN - 0126-6039

IS - 6

ER -