A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET

Sabuj Sarkar, Saikat Adhikary, Md. Mostafizur Rahman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper mainly proposes a novel current-voltage characteristic model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) for achieving significant amount of drain current performance. First, drain current characteristics is performed for increasing gate-source voltage with variable mobility and channel length circumstances. Then I-V characteristics of SiC MOSFET are compared and evaluated for different operating states i.e. cut-off, linear and saturation. Later, drain current is characterized with varying the transconductance. Finally the drain current is simulated for the proposed novel method and it is with that of existing method. From the simulated performance, it is obvious that the performance in terms of drain current increases significantly for the novel model than that of the existing model.

Original languageEnglish
Title of host publicationProceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019
EditorsAngsuman Sarkar
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages456-460
Number of pages5
ISBN (Electronic)9781538667224
DOIs
Publication statusPublished - 1 Mar 2019
Event3rd International Conference on Devices for Integrated Circuit, DevIC 2019 - Kalyani, Nadia, India
Duration: 23 Mar 201924 Mar 2019

Publication series

NameProceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019

Conference

Conference3rd International Conference on Devices for Integrated Circuit, DevIC 2019
CountryIndia
CityKalyani, Nadia
Period23/3/1924/3/19

Fingerprint

Drain current
MOSFET devices
metal oxide semiconductors
Silicon carbide
silicon carbides
field effect transistors
Electric potential
electric potential
Transconductance
Current voltage characteristics
transconductance
cut-off
saturation

Keywords

  • drain current
  • I-V Characteristics
  • MOSFET
  • Silicon carbide (SiC)
  • transconductance

ASJC Scopus subject areas

  • Instrumentation
  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Sarkar, S., Adhikary, S., & Rahman, M. M. (2019). A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET. In A. Sarkar (Ed.), Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019 (pp. 456-460). [8783905] (Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DEVIC.2019.8783905

A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET. / Sarkar, Sabuj; Adhikary, Saikat; Rahman, Md. Mostafizur.

Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019. ed. / Angsuman Sarkar. Institute of Electrical and Electronics Engineers Inc., 2019. p. 456-460 8783905 (Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sarkar, S, Adhikary, S & Rahman, MM 2019, A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET. in A Sarkar (ed.), Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019., 8783905, Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019, Institute of Electrical and Electronics Engineers Inc., pp. 456-460, 3rd International Conference on Devices for Integrated Circuit, DevIC 2019, Kalyani, Nadia, India, 23/3/19. https://doi.org/10.1109/DEVIC.2019.8783905
Sarkar S, Adhikary S, Rahman MM. A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET. In Sarkar A, editor, Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 456-460. 8783905. (Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019). https://doi.org/10.1109/DEVIC.2019.8783905
Sarkar, Sabuj ; Adhikary, Saikat ; Rahman, Md. Mostafizur. / A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET. Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019. editor / Angsuman Sarkar. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 456-460 (Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019).
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abstract = "This paper mainly proposes a novel current-voltage characteristic model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) for achieving significant amount of drain current performance. First, drain current characteristics is performed for increasing gate-source voltage with variable mobility and channel length circumstances. Then I-V characteristics of SiC MOSFET are compared and evaluated for different operating states i.e. cut-off, linear and saturation. Later, drain current is characterized with varying the transconductance. Finally the drain current is simulated for the proposed novel method and it is with that of existing method. From the simulated performance, it is obvious that the performance in terms of drain current increases significantly for the novel model than that of the existing model.",
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