A novel chemical molecular beam deposition method for fabrication of II-VI low dimensional structures

T. M. Razykov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

CdSe, CdTe and ZnxCdTe1-x films were fabricated by novel and low cost chemical molecular beam deposition method in the atmospheric pressure H2 and Ar flows. Zn, Cd, Se and Te were used as precursors. The kinetics of the growth process of the films depended strongly on the molecular beam intensity (MBI) ratio of the metal IA and the chalcogen IB and on the nature of the gas medium. Films did not condense for MBI ratios IA/IB≪1.0 and I A/IB≫1.0. Films were fabricated for 10 -2<IA/IB<10.0. The growth rate increased from 0.2 to 0.3 Å/s with equalization of MBI beginning when the ratios IA/IB<5-7. The value of the growth rate was saturated and equal to 1-2 Å/s at the congruent evaporation IA/I B=1.0 - 1.5. The value of the growth rate did not significantly change when IA/IB<0.2-0.5. The results of this study of the growth process of CdTe films in H2 and Ar flows showed that the growth rate was 2-3 times higher in the first case than in the second. The composition of ZnxCd1-xTe films depended linearly on the MBI ratio of the constituent elements.

Original languageEnglish
Pages (from-to)599-600
Number of pages2
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - Mar 2005
Externally publishedYes

Fingerprint

Molecular beams
molecular beams
Fabrication
fabrication
Chalcogens
Atmospheric pressure
atmospheric pressure
Evaporation
Gases
Metals
evaporation
costs
Kinetics
kinetics
Chemical analysis
gases
metals
Costs

Keywords

  • Chemical molecular beam deposition
  • Low dimensional
  • Quantum well

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

A novel chemical molecular beam deposition method for fabrication of II-VI low dimensional structures. / Razykov, T. M.

In: Microelectronics Journal, Vol. 36, No. 3-6, 03.2005, p. 599-600.

Research output: Contribution to journalArticle

@article{46e758a2407449c597ec9679ec161126,
title = "A novel chemical molecular beam deposition method for fabrication of II-VI low dimensional structures",
abstract = "CdSe, CdTe and ZnxCdTe1-x films were fabricated by novel and low cost chemical molecular beam deposition method in the atmospheric pressure H2 and Ar flows. Zn, Cd, Se and Te were used as precursors. The kinetics of the growth process of the films depended strongly on the molecular beam intensity (MBI) ratio of the metal IA and the chalcogen IB and on the nature of the gas medium. Films did not condense for MBI ratios IA/IB≪1.0 and I A/IB≫1.0. Films were fabricated for 10 -2<IA/IB<10.0. The growth rate increased from 0.2 to 0.3 {\AA}/s with equalization of MBI beginning when the ratios IA/IB<5-7. The value of the growth rate was saturated and equal to 1-2 {\AA}/s at the congruent evaporation IA/I B=1.0 - 1.5. The value of the growth rate did not significantly change when IA/IB<0.2-0.5. The results of this study of the growth process of CdTe films in H2 and Ar flows showed that the growth rate was 2-3 times higher in the first case than in the second. The composition of ZnxCd1-xTe films depended linearly on the MBI ratio of the constituent elements.",
keywords = "Chemical molecular beam deposition, Low dimensional, Quantum well",
author = "Razykov, {T. M.}",
year = "2005",
month = "3",
doi = "10.1016/j.mejo.2005.02.081",
language = "English",
volume = "36",
pages = "599--600",
journal = "Microelectronics",
issn = "0026-2692",
publisher = "Elsevier Limited",
number = "3-6",

}

TY - JOUR

T1 - A novel chemical molecular beam deposition method for fabrication of II-VI low dimensional structures

AU - Razykov, T. M.

PY - 2005/3

Y1 - 2005/3

N2 - CdSe, CdTe and ZnxCdTe1-x films were fabricated by novel and low cost chemical molecular beam deposition method in the atmospheric pressure H2 and Ar flows. Zn, Cd, Se and Te were used as precursors. The kinetics of the growth process of the films depended strongly on the molecular beam intensity (MBI) ratio of the metal IA and the chalcogen IB and on the nature of the gas medium. Films did not condense for MBI ratios IA/IB≪1.0 and I A/IB≫1.0. Films were fabricated for 10 -2<IA/IB<10.0. The growth rate increased from 0.2 to 0.3 Å/s with equalization of MBI beginning when the ratios IA/IB<5-7. The value of the growth rate was saturated and equal to 1-2 Å/s at the congruent evaporation IA/I B=1.0 - 1.5. The value of the growth rate did not significantly change when IA/IB<0.2-0.5. The results of this study of the growth process of CdTe films in H2 and Ar flows showed that the growth rate was 2-3 times higher in the first case than in the second. The composition of ZnxCd1-xTe films depended linearly on the MBI ratio of the constituent elements.

AB - CdSe, CdTe and ZnxCdTe1-x films were fabricated by novel and low cost chemical molecular beam deposition method in the atmospheric pressure H2 and Ar flows. Zn, Cd, Se and Te were used as precursors. The kinetics of the growth process of the films depended strongly on the molecular beam intensity (MBI) ratio of the metal IA and the chalcogen IB and on the nature of the gas medium. Films did not condense for MBI ratios IA/IB≪1.0 and I A/IB≫1.0. Films were fabricated for 10 -2<IA/IB<10.0. The growth rate increased from 0.2 to 0.3 Å/s with equalization of MBI beginning when the ratios IA/IB<5-7. The value of the growth rate was saturated and equal to 1-2 Å/s at the congruent evaporation IA/I B=1.0 - 1.5. The value of the growth rate did not significantly change when IA/IB<0.2-0.5. The results of this study of the growth process of CdTe films in H2 and Ar flows showed that the growth rate was 2-3 times higher in the first case than in the second. The composition of ZnxCd1-xTe films depended linearly on the MBI ratio of the constituent elements.

KW - Chemical molecular beam deposition

KW - Low dimensional

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=33644525611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644525611&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.081

DO - 10.1016/j.mejo.2005.02.081

M3 - Article

AN - SCOPUS:33644525611

VL - 36

SP - 599

EP - 600

JO - Microelectronics

JF - Microelectronics

SN - 0026-2692

IS - 3-6

ER -