A new analytical model for lateral breakdown voltage of double-gate power MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A simple analytical model for the surface potential, surface field distribution and lateral breakdown voltage of double-gate power MOSFETs has been proposed. The model is based on the analytical solution for the two-dimensional Poisson equation. From this solution, the reliance of breakdown voltage on the device parameters is also investigated. The validity of this model is demonstrated by comparison with numerical simulation and experimental values.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages92-95
Number of pages4
DOIs
Publication statusPublished - 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah
Duration: 28 Sep 201130 Sep 2011

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CityKota Kinabalu, Sabah
Period28/9/1130/9/11

Fingerprint

Electric breakdown
Analytical models
Poisson equation
Surface potential
Computer simulation
Power MOSFET

Keywords

  • Analytical model
  • Breakdown voltage
  • Double-gate
  • Surface potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mohammad, H., Abdullah, H., Dee, C. F., N V Visvanathan, P. S. M., & Yeop Majlis, B. (2011). A new analytical model for lateral breakdown voltage of double-gate power MOSFETs. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 92-95). [6088299] https://doi.org/10.1109/RSM.2011.6088299

A new analytical model for lateral breakdown voltage of double-gate power MOSFETs. / Mohammad, Hossein; Abdullah, Huda; Dee, Chang Fu; N V Visvanathan, P. Susthitha Menon; Yeop Majlis, Burhanuddin.

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 92-95 6088299.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mohammad, H, Abdullah, H, Dee, CF, N V Visvanathan, PSM & Yeop Majlis, B 2011, A new analytical model for lateral breakdown voltage of double-gate power MOSFETs. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088299, pp. 92-95, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, 28/9/11. https://doi.org/10.1109/RSM.2011.6088299
Mohammad H, Abdullah H, Dee CF, N V Visvanathan PSM, Yeop Majlis B. A new analytical model for lateral breakdown voltage of double-gate power MOSFETs. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 92-95. 6088299 https://doi.org/10.1109/RSM.2011.6088299
Mohammad, Hossein ; Abdullah, Huda ; Dee, Chang Fu ; N V Visvanathan, P. Susthitha Menon ; Yeop Majlis, Burhanuddin. / A new analytical model for lateral breakdown voltage of double-gate power MOSFETs. 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. pp. 92-95
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