A multiband 130nm CMOS second order band pass filter for LTE bands

Noor Ain Kamsani, Veeraiyah Thangasamy, Muhammad Faiz Bukhori, Suhaide Shafie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications.

Original languageEnglish
Title of host publicationProceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages100-105
Number of pages6
ISBN (Print)9781479917310
DOIs
Publication statusPublished - 27 Jan 2016
EventIEEE International Circuits and Systems Symposium, ICSyS 2015 - Langkawi, Malaysia
Duration: 2 Sep 20154 Sep 2015

Other

OtherIEEE International Circuits and Systems Symposium, ICSyS 2015
CountryMalaysia
CityLangkawi
Period2/9/154/9/15

Fingerprint

local thermodynamic equilibrium
Bandpass filters
bandpass filters
Resonant circuits
CMOS
filters
Q factors
tunable filters
Noise figure
capacitors
Capacitors
bandwidth
Bandwidth
trends
air
Air

Keywords

  • Band Pass Filter
  • Bandwidth
  • Gain
  • Multiband
  • Q-factor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Kamsani, N. A., Thangasamy, V., Bukhori, M. F., & Shafie, S. (2016). A multiband 130nm CMOS second order band pass filter for LTE bands. In Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015 (pp. 100-105). [7394073] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CircuitsAndSystems.2015.7394073

A multiband 130nm CMOS second order band pass filter for LTE bands. / Kamsani, Noor Ain; Thangasamy, Veeraiyah; Bukhori, Muhammad Faiz; Shafie, Suhaide.

Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 100-105 7394073.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kamsani, NA, Thangasamy, V, Bukhori, MF & Shafie, S 2016, A multiband 130nm CMOS second order band pass filter for LTE bands. in Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015., 7394073, Institute of Electrical and Electronics Engineers Inc., pp. 100-105, IEEE International Circuits and Systems Symposium, ICSyS 2015, Langkawi, Malaysia, 2/9/15. https://doi.org/10.1109/CircuitsAndSystems.2015.7394073
Kamsani NA, Thangasamy V, Bukhori MF, Shafie S. A multiband 130nm CMOS second order band pass filter for LTE bands. In Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 100-105. 7394073 https://doi.org/10.1109/CircuitsAndSystems.2015.7394073
Kamsani, Noor Ain ; Thangasamy, Veeraiyah ; Bukhori, Muhammad Faiz ; Shafie, Suhaide. / A multiband 130nm CMOS second order band pass filter for LTE bands. Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 100-105
@inproceedings{5f90d9a165fa4d4db61dd913016d2e9e,
title = "A multiband 130nm CMOS second order band pass filter for LTE bands",
abstract = "With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications.",
keywords = "Band Pass Filter, Bandwidth, Gain, Multiband, Q-factor",
author = "Kamsani, {Noor Ain} and Veeraiyah Thangasamy and Bukhori, {Muhammad Faiz} and Suhaide Shafie",
year = "2016",
month = "1",
day = "27",
doi = "10.1109/CircuitsAndSystems.2015.7394073",
language = "English",
isbn = "9781479917310",
pages = "100--105",
booktitle = "Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - A multiband 130nm CMOS second order band pass filter for LTE bands

AU - Kamsani, Noor Ain

AU - Thangasamy, Veeraiyah

AU - Bukhori, Muhammad Faiz

AU - Shafie, Suhaide

PY - 2016/1/27

Y1 - 2016/1/27

N2 - With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications.

AB - With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications.

KW - Band Pass Filter

KW - Bandwidth

KW - Gain

KW - Multiband

KW - Q-factor

UR - http://www.scopus.com/inward/record.url?scp=84969822460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84969822460&partnerID=8YFLogxK

U2 - 10.1109/CircuitsAndSystems.2015.7394073

DO - 10.1109/CircuitsAndSystems.2015.7394073

M3 - Conference contribution

SN - 9781479917310

SP - 100

EP - 105

BT - Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -