A multiband 130nm CMOS low noise amplifier for LTE bands

Noor Ain Kamsani, Veeraiyah Thangasamy, Muhammad Faiz Bukhori, Suhaide Shafie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for the implementation of multiband (MB) devices in the RF front-end of the wireless handsets. This paper presents the design of multiband low noise amplifier (LNA) in the 130nm Silterra CMOS technology. The proposed LNA operates in five major LTE bands (band 1, 2, 3, 4 and 8) used in the smartphone transceiver. The proposed design uses a transistor based shunt feedback to lower the noise figure of the LNA. It uses switched capacitors and MOS varactors that are controlled externally to achieve multiband operation. The gain, noise figure, IIP3 achieved are 20dB, 2.9-4.35dB and -15dBm respectively. The proposed circuit consumes 20.7mW power at 1.2V operation. Notably, the proposed LNA operates at both low-band and high-band making it more suitable for the multiband requirement of modern wireless transceiver frontends.

Original languageEnglish
Title of host publicationProceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages106-110
Number of pages5
ISBN (Print)9781479917310
DOIs
Publication statusPublished - 27 Jan 2016
EventIEEE International Circuits and Systems Symposium, ICSyS 2015 - Langkawi, Malaysia
Duration: 2 Sep 20154 Sep 2015

Other

OtherIEEE International Circuits and Systems Symposium, ICSyS 2015
CountryMalaysia
CityLangkawi
Period2/9/154/9/15

Fingerprint

Low noise amplifiers
local thermodynamic equilibrium
low noise
CMOS
amplifiers
Noise figure
transmitter receivers
Transceivers
varactor diodes
Varactors
Smartphones
shunts
capacitors
Transistors
Capacitors
transistors
Feedback
trends
requirements
Networks (circuits)

Keywords

  • Bandwidth
  • Gain
  • Low Noise Amplifier
  • Multiband
  • Noise Figure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Kamsani, N. A., Thangasamy, V., Bukhori, M. F., & Shafie, S. (2016). A multiband 130nm CMOS low noise amplifier for LTE bands. In Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015 (pp. 106-110). [7394074] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CircuitsAndSystems.2015.7394074

A multiband 130nm CMOS low noise amplifier for LTE bands. / Kamsani, Noor Ain; Thangasamy, Veeraiyah; Bukhori, Muhammad Faiz; Shafie, Suhaide.

Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 106-110 7394074.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kamsani, NA, Thangasamy, V, Bukhori, MF & Shafie, S 2016, A multiband 130nm CMOS low noise amplifier for LTE bands. in Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015., 7394074, Institute of Electrical and Electronics Engineers Inc., pp. 106-110, IEEE International Circuits and Systems Symposium, ICSyS 2015, Langkawi, Malaysia, 2/9/15. https://doi.org/10.1109/CircuitsAndSystems.2015.7394074
Kamsani NA, Thangasamy V, Bukhori MF, Shafie S. A multiband 130nm CMOS low noise amplifier for LTE bands. In Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 106-110. 7394074 https://doi.org/10.1109/CircuitsAndSystems.2015.7394074
Kamsani, Noor Ain ; Thangasamy, Veeraiyah ; Bukhori, Muhammad Faiz ; Shafie, Suhaide. / A multiband 130nm CMOS low noise amplifier for LTE bands. Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 106-110
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