A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's

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2 Citations (Scopus)

Abstract

Analytical modeling of channel potential of SOI MESFET can be obtained by solving Poisson's equation to derive an expression for channel potential. Superposition method is an accurate technique for solving Poisson's equation, in which the solution of the 2-D Poisson's equation is represented as the sum of the 1-D Poisson's equation and a 2-D Laplace's equation solutions. In the existing models applying this method, the authors tried to solve 2-D Laplace's equation by using approximations [1] or modifying the boundary conditions [2] producing inaccurate results. In this report, a new methodology is applied to develop a modified analytical model for the channel potential of fully depleted SOI MESFET's, in which the drawbacks of the previous models are significantly eliminated. Using this model, the subthreshold performance of the device including channel potential, threshold voltage, drain current, and subthreshold swing under various conditions have been studied, plotted, and compared with TCAD simulation and experimental results. It is concluded the proposed model has been improved in term of accuracy compared to other existing models.

Original languageEnglish
Pages (from-to)173-179
Number of pages7
JournalMicroelectronics Reliability
Volume83
DOIs
Publication statusPublished - 1 Apr 2018

Fingerprint

SOI (semiconductors)
Poisson equation
Analytical models
field effect transistors
Laplace equation
Drain current
Threshold voltage
threshold voltage
Boundary conditions
methodology
boundary conditions
approximation
simulation

Keywords

  • Analytical modeling
  • Boundary conditions
  • Channel potential
  • Orthogonality property
  • SOI-MESFET
  • Subthreshold swing
  • Superposition method
  • Threshold voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's",
abstract = "Analytical modeling of channel potential of SOI MESFET can be obtained by solving Poisson's equation to derive an expression for channel potential. Superposition method is an accurate technique for solving Poisson's equation, in which the solution of the 2-D Poisson's equation is represented as the sum of the 1-D Poisson's equation and a 2-D Laplace's equation solutions. In the existing models applying this method, the authors tried to solve 2-D Laplace's equation by using approximations [1] or modifying the boundary conditions [2] producing inaccurate results. In this report, a new methodology is applied to develop a modified analytical model for the channel potential of fully depleted SOI MESFET's, in which the drawbacks of the previous models are significantly eliminated. Using this model, the subthreshold performance of the device including channel potential, threshold voltage, drain current, and subthreshold swing under various conditions have been studied, plotted, and compared with TCAD simulation and experimental results. It is concluded the proposed model has been improved in term of accuracy compared to other existing models.",
keywords = "Analytical modeling, Boundary conditions, Channel potential, Orthogonality property, SOI-MESFET, Subthreshold swing, Superposition method, Threshold voltage",
author = "Hossein Mohammadi and Huda Abdullah and Dee, {Chang Fu} and {N V Visvanathan}, {P. Susthitha Menon}",
year = "2018",
month = "4",
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doi = "10.1016/j.microrel.2018.03.004",
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journal = "Microelectronics and Reliability",
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publisher = "Elsevier Limited",

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TY - JOUR

T1 - A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's

AU - Mohammadi, Hossein

AU - Abdullah, Huda

AU - Dee, Chang Fu

AU - N V Visvanathan, P. Susthitha Menon

PY - 2018/4/1

Y1 - 2018/4/1

N2 - Analytical modeling of channel potential of SOI MESFET can be obtained by solving Poisson's equation to derive an expression for channel potential. Superposition method is an accurate technique for solving Poisson's equation, in which the solution of the 2-D Poisson's equation is represented as the sum of the 1-D Poisson's equation and a 2-D Laplace's equation solutions. In the existing models applying this method, the authors tried to solve 2-D Laplace's equation by using approximations [1] or modifying the boundary conditions [2] producing inaccurate results. In this report, a new methodology is applied to develop a modified analytical model for the channel potential of fully depleted SOI MESFET's, in which the drawbacks of the previous models are significantly eliminated. Using this model, the subthreshold performance of the device including channel potential, threshold voltage, drain current, and subthreshold swing under various conditions have been studied, plotted, and compared with TCAD simulation and experimental results. It is concluded the proposed model has been improved in term of accuracy compared to other existing models.

AB - Analytical modeling of channel potential of SOI MESFET can be obtained by solving Poisson's equation to derive an expression for channel potential. Superposition method is an accurate technique for solving Poisson's equation, in which the solution of the 2-D Poisson's equation is represented as the sum of the 1-D Poisson's equation and a 2-D Laplace's equation solutions. In the existing models applying this method, the authors tried to solve 2-D Laplace's equation by using approximations [1] or modifying the boundary conditions [2] producing inaccurate results. In this report, a new methodology is applied to develop a modified analytical model for the channel potential of fully depleted SOI MESFET's, in which the drawbacks of the previous models are significantly eliminated. Using this model, the subthreshold performance of the device including channel potential, threshold voltage, drain current, and subthreshold swing under various conditions have been studied, plotted, and compared with TCAD simulation and experimental results. It is concluded the proposed model has been improved in term of accuracy compared to other existing models.

KW - Analytical modeling

KW - Boundary conditions

KW - Channel potential

KW - Orthogonality property

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KW - Subthreshold swing

KW - Superposition method

KW - Threshold voltage

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