A low voltage-type sense amplifier design for EEPROM memory

L. F. Rahman, Md. Mamun Ibne Reaz, M. A M Ali

Research output: Contribution to journalArticle

Abstract

To ensure both the reduced reading power and the enhanced reliability of the nonvolatilememories like EEPROM embedded in RFID transponders, a new low voltage-type sense amplifier (SA) is designed. The topology of the designed sense amplifier uses a voltage sensingmethod, with low cost, low power consumption as well as high reliability. The sense amplifierwas designed in CEDEC 0.18-μm CMOS embedded EEPROM process with the 3.7 V power supply. Simulation results showed that the circuit is able to operate between 1 V to 3.7 V within the temperature range from -250 C to 1250 C. The novel topology allows the circuit to function with power supplies as low as 1 V. The simulations show that the new voltage-type sense amplifier required lower voltage than the previously reported voltage-type sense amplifier by Liu et al. Additionally the MOS size used for this circuit is 0.18-μm, which reduced the size of the circuit.

Original languageEnglish
Pages (from-to)1379-1385
Number of pages7
JournalTelecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika)
Volume70
Issue number15
DOIs
Publication statusPublished - 2011

Fingerprint

Data storage equipment
Electric potential
Networks (circuits)
Topology
Transponders
Radio frequency identification (RFID)
Electric power utilization
Costs
Temperature

Keywords

  • EEPROM
  • Low power
  • Sense amplifier
  • Voltage-type sensing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A low voltage-type sense amplifier design for EEPROM memory. / Rahman, L. F.; Ibne Reaz, Md. Mamun; Ali, M. A M.

In: Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), Vol. 70, No. 15, 2011, p. 1379-1385.

Research output: Contribution to journalArticle

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