Serijski izlazni impulsni ADC male snage u 0,18 μm CMOS postupku

Translated title of the contribution: A low power serial output flash ADC in 0,18 μm CMOS process

Al Al, Md. Mamun Ibne Reaz, Md Syedul Amin, Mohd Alauddin Mohd Ali, Jae Sung, Tae Gyu Chang

Research output: Contribution to journalArticle

Abstract

This paper proposes a simple design of a flash analog-to-digital converter (ADC) in 0,18 μm CMOS technology. This ADC is expected to be used within a temperature sensor, which provides analog data output having a range of 360 mV to 560 mV. This system consists of three main blocks: the threshold inverter quantization (TIQ)-comparator, encoder and parallel input serial output (PISO) register. The design goal is to get a flash ADC with low power dissipation, small size and compatible with the temperature sensors. The method is proposed to set each of the transistor channel length, for finding out the threshold voltage difference of the inverter each on the TIQ comparator. The design has an input range of 285 to 600 mV and 6-bit resolution output. The chip area of the designed ADC is 844,48 × 764,77 μm2 and the power dissipation is 0,162 μW with 1,6 V supply voltage.

Original languageUndefined/Unknown
Pages (from-to)1425-1431
Number of pages7
JournalTehnicki Vjesnik
Volume22
Issue number6
DOIs
Publication statusPublished - 2015

Fingerprint

Digital to analog conversion
Temperature sensors
Energy dissipation
Threshold voltage
Transistors
Electric potential

Keywords

  • CMOS
  • Comparator
  • Flash ADC
  • Temperature sensor

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Serijski izlazni impulsni ADC male snage u 0,18 μm CMOS postupku. / Al, Al; Ibne Reaz, Md. Mamun; Amin, Md Syedul; Ali, Mohd Alauddin Mohd; Sung, Jae; Chang, Tae Gyu.

In: Tehnicki Vjesnik, Vol. 22, No. 6, 2015, p. 1425-1431.

Research output: Contribution to journalArticle

Al, Al ; Ibne Reaz, Md. Mamun ; Amin, Md Syedul ; Ali, Mohd Alauddin Mohd ; Sung, Jae ; Chang, Tae Gyu. / Serijski izlazni impulsni ADC male snage u 0,18 μm CMOS postupku. In: Tehnicki Vjesnik. 2015 ; Vol. 22, No. 6. pp. 1425-1431.
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