A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

M. H. Ani, M. A. Kamarudin, A. H. Ramlan, E. Ismail, M. S. Sirat, Mohd Ambri Mohamed, M. A. Azam

Research output: Contribution to journalReview article

7 Citations (Scopus)

Abstract

Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

Original languageEnglish
Pages (from-to)7095-7111
Number of pages17
JournalJournal of Materials Science
Volume53
Issue number10
DOIs
Publication statusPublished - 1 May 2018

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Graphite
Graphene
Nucleation
Chemical vapor deposition
Chemical properties
Electric properties
Optical properties
Metals
Fabrication
Mechanical properties
Defects
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene. / Ani, M. H.; Kamarudin, M. A.; Ramlan, A. H.; Ismail, E.; Sirat, M. S.; Mohamed, Mohd Ambri; Azam, M. A.

In: Journal of Materials Science, Vol. 53, No. 10, 01.05.2018, p. 7095-7111.

Research output: Contribution to journalReview article

Ani, M. H. ; Kamarudin, M. A. ; Ramlan, A. H. ; Ismail, E. ; Sirat, M. S. ; Mohamed, Mohd Ambri ; Azam, M. A. / A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene. In: Journal of Materials Science. 2018 ; Vol. 53, No. 10. pp. 7095-7111.
@article{344ec9340317416caaad2eafe97469ac,
title = "A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene",
abstract = "Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.",
author = "Ani, {M. H.} and Kamarudin, {M. A.} and Ramlan, {A. H.} and E. Ismail and Sirat, {M. S.} and Mohamed, {Mohd Ambri} and Azam, {M. A.}",
year = "2018",
month = "5",
day = "1",
doi = "10.1007/s10853-018-1994-0",
language = "English",
volume = "53",
pages = "7095--7111",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "10",

}

TY - JOUR

T1 - A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

AU - Ani, M. H.

AU - Kamarudin, M. A.

AU - Ramlan, A. H.

AU - Ismail, E.

AU - Sirat, M. S.

AU - Mohamed, Mohd Ambri

AU - Azam, M. A.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

AB - Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

UR - http://www.scopus.com/inward/record.url?scp=85040657744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040657744&partnerID=8YFLogxK

U2 - 10.1007/s10853-018-1994-0

DO - 10.1007/s10853-018-1994-0

M3 - Review article

AN - SCOPUS:85040657744

VL - 53

SP - 7095

EP - 7111

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 10

ER -