A comprehensive study on Mo/CdTe metal-semiconductor interface deposited by radio frequency magnetron sputtering

N. Dhar, N. A. Khan, P. Chelvanathan, Md. Akhtaruzzaman, M. M. Alam, Z. A. Alothman, Kamaruzzaman Sopian, Nowshad Amin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Metal-semiconductor (MS) junction between Mo and CdTe, which is one of the fundamental issues for CdTe based solar cell, has been investigated for films deposited on different substrates. XRD pattern of Mo/CdTe films on the polyimide (PI) substrate shows a strong preferential orientation of MoTe2 in (100) at 2θ = 29.44°, which becomes less apparent as deposition time of CdTe increases. However, on soda lime glass (SLG) no such XRD reflection pattern is observed. Moreover, from EDX measurement, Mo-Te compound also identifies MoTe2 at Mo/CdTe interface on PI substrate, which is not present on SLG. Bulk carrier concentration of Mo/CdTe films on PI substrate for lower deposition time of CdTe is found 1.42×1018 cm-3, which is almost equal to MoTe2. Thereafter, it decreases as CdTe growth time increases. The type of unintentionally formed MoTe2 on PI substrate is found to be n-type in nature. Lattice constants of a = 6.5 Å for CdTe and a = 3.52 Å for MoTe2 are found from nanostructure study by TEM.

Original languageEnglish
Pages (from-to)9291-9297
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number11
DOIs
Publication statusPublished - 1 Nov 2015

Fingerprint

Semiconductors
Radio
Magnetron sputtering
radio frequencies
magnetron sputtering
polyimides
Polyimides
Metals
Semiconductor materials
Glass
Substrates
metals
calcium oxides
Nanostructures
Lime
Semiconductor junctions
semiconductor junctions
glass
Lattice constants
Carrier concentration

Keywords

  • CdTe
  • Metal-semiconductor junction
  • Mo
  • MoTe
  • TEM
  • Thin film solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

A comprehensive study on Mo/CdTe metal-semiconductor interface deposited by radio frequency magnetron sputtering. / Dhar, N.; Khan, N. A.; Chelvanathan, P.; Akhtaruzzaman, Md.; Alam, M. M.; Alothman, Z. A.; Sopian, Kamaruzzaman; Amin, Nowshad.

In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 11, 01.11.2015, p. 9291-9297.

Research output: Contribution to journalArticle

Dhar, N. ; Khan, N. A. ; Chelvanathan, P. ; Akhtaruzzaman, Md. ; Alam, M. M. ; Alothman, Z. A. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / A comprehensive study on Mo/CdTe metal-semiconductor interface deposited by radio frequency magnetron sputtering. In: Journal of Nanoscience and Nanotechnology. 2015 ; Vol. 15, No. 11. pp. 9291-9297.
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