A complementary metal oxide semiconductor (CMOS) bandpass filter for cost-efficient radio frequency (RF) appliances

Mohammd Arif Sobhan Bhuiyan, Mastura Binti Omar, Md. Mamun Ibne Reaz, Noorfazila Kamal, Sawal Hamid Md Ali

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A band pass filter is an inherent part of every radio frequency (RF) transceiver. The usage of spiral inductors in band-pass filters cannot overcome limitations such as loss due to parasitic effects, large chip area, low quality factor, less tenability, etc. Therefore, this paper presents an active inductor based design of a second order bandpass filter in 0.18μm complementary metal oxide semiconductor (CMOS) technology for 2.4 GHz radio frequency (RF) applications. The centre frequency of the proposed band pass filter can be adjusted from 1.86 GHz to 3.33 GHz with high Q factor of 250 at 2.45GHz. This filter dissipates only 3.407 mW at 1.5V supply voltage and occupies only 0.0014 mm2 chip area.

Original languageEnglish
Pages (from-to)114-127
Number of pages14
JournalJournal of Engineering Research
Volume4
Issue number3
Publication statusPublished - 2016

Fingerprint

Bandpass filters
Metals
Costs
Transceivers
Oxide semiconductors
Electric potential

Keywords

  • Active inductor
  • Band-pass filter
  • Complementary metal oxide semiconductor
  • Integrated circuits
  • Radio frequency

ASJC Scopus subject areas

  • Engineering(all)

Cite this

A complementary metal oxide semiconductor (CMOS) bandpass filter for cost-efficient radio frequency (RF) appliances. / Bhuiyan, Mohammd Arif Sobhan; Omar, Mastura Binti; Ibne Reaz, Md. Mamun; Kamal, Noorfazila; Md Ali, Sawal Hamid.

In: Journal of Engineering Research, Vol. 4, No. 3, 2016, p. 114-127.

Research output: Contribution to journalArticle

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