A comparative study on SOI MOSFETS for low power applications

Khairul Affendi Rosli, Raja Mohd Noor Hafizi Raja Daud, Md. Mamun Ibne Reaz, Mohammad Arif Sobhan Bhuiyan

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Silicon on Insulator (SOI) technology has become one of the most promising technologies in semiconductor fabrication industry for its numerous advantages. This study presents merits and demerits of different SOIs presented in literatures and a comparative study is done based on several design and performance issues for low power applications. From the study it is found that Fully Depleted SOI MOSFET (FDSOI) technology is preferred due to its thin size, reduced leakage current and improved power consumption characteristics etc. compared to those of PDSOI and bulk silicon technology.

Original languageEnglish
Pages (from-to)2586-2591
Number of pages6
JournalResearch Journal of Applied Sciences, Engineering and Technology
Volume5
Issue number8
Publication statusPublished - 2013

Fingerprint

Silicon
Silicon on insulator technology
Leakage currents
Electric power utilization
Semiconductor materials
Fabrication
Industry

Keywords

  • FDSOI
  • Low power
  • MOSFET
  • PDSOI
  • SOI

ASJC Scopus subject areas

  • Engineering(all)
  • Computer Science(all)

Cite this

A comparative study on SOI MOSFETS for low power applications. / Rosli, Khairul Affendi; Daud, Raja Mohd Noor Hafizi Raja; Ibne Reaz, Md. Mamun; Bhuiyan, Mohammad Arif Sobhan.

In: Research Journal of Applied Sciences, Engineering and Technology, Vol. 5, No. 8, 2013, p. 2586-2591.

Research output: Contribution to journalArticle

Rosli, Khairul Affendi ; Daud, Raja Mohd Noor Hafizi Raja ; Ibne Reaz, Md. Mamun ; Bhuiyan, Mohammad Arif Sobhan. / A comparative study on SOI MOSFETS for low power applications. In: Research Journal of Applied Sciences, Engineering and Technology. 2013 ; Vol. 5, No. 8. pp. 2586-2591.
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