4-Channel double S-shaped AWG demultiplexer on SOI for CWDM

Nurjuliana Juhari, P. Susthitha Menon N V Visvanathan, Abang Annuar Ehsan, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the design, fabrication and characterization of silicon-on-insulator (SOI)-based Arrayed Waveguide Grating (AWG) with broad channel spacing of 20 nm (∼2500 GHz) which has a unique double S-shaped pattern at the arrayed region. Beam propagation method (BPM) under TE polarization at a central wavelength of 2431GHz and Complementary-Metal Oxide Semiconductor (CMOS) technology are used to simulate and fabricate the AWG device with 340 nm thick top silicon (Si) guiding layer. Performance comparison of insertion loss and optical crosstalk between the simulated and fabricated AWG was discussed. SOI-based AWG is employed in the Coarse Wavelength Division Multiplexing (CWDM) system to investigate the functionality of the device at a system level as well as to analyse signal degradation using a bit-error rate (BER) analyzer when 10 Gb/s and 40 Gb/s data rates are applied.

Original languageEnglish
Title of host publicationInternational Conference on Advanced Communication Technology, ICACT
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages436-440
Number of pages5
Volume2015-August
ISBN (Print)9788996865056, 9788996865056, 9788996865056
DOIs
Publication statusPublished - 25 Aug 2015
Event17th IEEE International Conference on Advanced Communications Technology, ICACT 2015 - PyeonhChang, Korea, Republic of
Duration: 1 Jul 20153 Jul 2015

Other

Other17th IEEE International Conference on Advanced Communications Technology, ICACT 2015
CountryKorea, Republic of
CityPyeonhChang
Period1/7/153/7/15

Fingerprint

Arrayed waveguide gratings
Wavelength division multiplexing
Silicon
Beam propagation method
Crosstalk
Insertion losses
Bit error rate
Polarization
Fabrication
Degradation
Wavelength
Metals

Keywords

  • AWG
  • broad channel spacing
  • CMOS technology
  • CWDM system
  • SOI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Juhari, N., N V Visvanathan, P. S. M., Ehsan, A. A., & Shaari, S. (2015). 4-Channel double S-shaped AWG demultiplexer on SOI for CWDM. In International Conference on Advanced Communication Technology, ICACT (Vol. 2015-August, pp. 436-440). [7224833] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICACT.2015.7224833

4-Channel double S-shaped AWG demultiplexer on SOI for CWDM. / Juhari, Nurjuliana; N V Visvanathan, P. Susthitha Menon; Ehsan, Abang Annuar; Shaari, Sahbudin.

International Conference on Advanced Communication Technology, ICACT. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. 436-440 7224833.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Juhari, N, N V Visvanathan, PSM, Ehsan, AA & Shaari, S 2015, 4-Channel double S-shaped AWG demultiplexer on SOI for CWDM. in International Conference on Advanced Communication Technology, ICACT. vol. 2015-August, 7224833, Institute of Electrical and Electronics Engineers Inc., pp. 436-440, 17th IEEE International Conference on Advanced Communications Technology, ICACT 2015, PyeonhChang, Korea, Republic of, 1/7/15. https://doi.org/10.1109/ICACT.2015.7224833
Juhari N, N V Visvanathan PSM, Ehsan AA, Shaari S. 4-Channel double S-shaped AWG demultiplexer on SOI for CWDM. In International Conference on Advanced Communication Technology, ICACT. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. 436-440. 7224833 https://doi.org/10.1109/ICACT.2015.7224833
Juhari, Nurjuliana ; N V Visvanathan, P. Susthitha Menon ; Ehsan, Abang Annuar ; Shaari, Sahbudin. / 4-Channel double S-shaped AWG demultiplexer on SOI for CWDM. International Conference on Advanced Communication Technology, ICACT. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. 436-440
@inproceedings{72f29f5e44d549458a690bd7347d4d3c,
title = "4-Channel double S-shaped AWG demultiplexer on SOI for CWDM",
abstract = "We demonstrate the design, fabrication and characterization of silicon-on-insulator (SOI)-based Arrayed Waveguide Grating (AWG) with broad channel spacing of 20 nm (∼2500 GHz) which has a unique double S-shaped pattern at the arrayed region. Beam propagation method (BPM) under TE polarization at a central wavelength of 2431GHz and Complementary-Metal Oxide Semiconductor (CMOS) technology are used to simulate and fabricate the AWG device with 340 nm thick top silicon (Si) guiding layer. Performance comparison of insertion loss and optical crosstalk between the simulated and fabricated AWG was discussed. SOI-based AWG is employed in the Coarse Wavelength Division Multiplexing (CWDM) system to investigate the functionality of the device at a system level as well as to analyse signal degradation using a bit-error rate (BER) analyzer when 10 Gb/s and 40 Gb/s data rates are applied.",
keywords = "AWG, broad channel spacing, CMOS technology, CWDM system, SOI",
author = "Nurjuliana Juhari and {N V Visvanathan}, {P. Susthitha Menon} and Ehsan, {Abang Annuar} and Sahbudin Shaari",
year = "2015",
month = "8",
day = "25",
doi = "10.1109/ICACT.2015.7224833",
language = "English",
isbn = "9788996865056",
volume = "2015-August",
pages = "436--440",
booktitle = "International Conference on Advanced Communication Technology, ICACT",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - 4-Channel double S-shaped AWG demultiplexer on SOI for CWDM

AU - Juhari, Nurjuliana

AU - N V Visvanathan, P. Susthitha Menon

AU - Ehsan, Abang Annuar

AU - Shaari, Sahbudin

PY - 2015/8/25

Y1 - 2015/8/25

N2 - We demonstrate the design, fabrication and characterization of silicon-on-insulator (SOI)-based Arrayed Waveguide Grating (AWG) with broad channel spacing of 20 nm (∼2500 GHz) which has a unique double S-shaped pattern at the arrayed region. Beam propagation method (BPM) under TE polarization at a central wavelength of 2431GHz and Complementary-Metal Oxide Semiconductor (CMOS) technology are used to simulate and fabricate the AWG device with 340 nm thick top silicon (Si) guiding layer. Performance comparison of insertion loss and optical crosstalk between the simulated and fabricated AWG was discussed. SOI-based AWG is employed in the Coarse Wavelength Division Multiplexing (CWDM) system to investigate the functionality of the device at a system level as well as to analyse signal degradation using a bit-error rate (BER) analyzer when 10 Gb/s and 40 Gb/s data rates are applied.

AB - We demonstrate the design, fabrication and characterization of silicon-on-insulator (SOI)-based Arrayed Waveguide Grating (AWG) with broad channel spacing of 20 nm (∼2500 GHz) which has a unique double S-shaped pattern at the arrayed region. Beam propagation method (BPM) under TE polarization at a central wavelength of 2431GHz and Complementary-Metal Oxide Semiconductor (CMOS) technology are used to simulate and fabricate the AWG device with 340 nm thick top silicon (Si) guiding layer. Performance comparison of insertion loss and optical crosstalk between the simulated and fabricated AWG was discussed. SOI-based AWG is employed in the Coarse Wavelength Division Multiplexing (CWDM) system to investigate the functionality of the device at a system level as well as to analyse signal degradation using a bit-error rate (BER) analyzer when 10 Gb/s and 40 Gb/s data rates are applied.

KW - AWG

KW - broad channel spacing

KW - CMOS technology

KW - CWDM system

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=84949997638&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949997638&partnerID=8YFLogxK

U2 - 10.1109/ICACT.2015.7224833

DO - 10.1109/ICACT.2015.7224833

M3 - Conference contribution

SN - 9788996865056

SN - 9788996865056

SN - 9788996865056

VL - 2015-August

SP - 436

EP - 440

BT - International Conference on Advanced Communication Technology, ICACT

PB - Institute of Electrical and Electronics Engineers Inc.

ER -