0.5GHz - 1.5GHz bandwidth 10W GaN HEMT RF power amplifier design

Shiva Ghandi Isma Ilamaran, Zubaida Yusoff, Jahariah Sampe

Research output: Contribution to journalArticle

Abstract

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

LanguageEnglish
Pages1837-1843
Number of pages7
JournalInternational Journal of Electrical and Computer Engineering
Volume8
Issue number3
DOIs
Publication statusPublished - 1 Jun 2018
Externally publishedYes

Fingerprint

High electron mobility transistors
Power amplifiers
Bandwidth
Communication

Keywords

  • GaN
  • RF power amplifier
  • Wideband

ASJC Scopus subject areas

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

0.5GHz - 1.5GHz bandwidth 10W GaN HEMT RF power amplifier design. / Ilamaran, Shiva Ghandi Isma; Yusoff, Zubaida; Sampe, Jahariah.

In: International Journal of Electrical and Computer Engineering, Vol. 8, No. 3, 01.06.2018, p. 1837-1843.

Research output: Contribution to journalArticle

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