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Research Output 2007 2017

  • 255 Citations
  • 8 h-Index
  • 17 Conference contribution
  • 13 Article
2017
1 Citation (Scopus)

Digital-Controlled Multimode Multiband Power Amplifier with Multiple Gated Transistor

Thangasamy, V., Kamsani, N. A., Hamidon, M. N., Hashim, S. J., Yusoff, Z. & Bukhori, M. F., 2 Jan 2017, In : IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India). 34, 1, p. 48-57 10 p.

Research output: Contribution to journalArticle

Power amplifiers
Transistors
Long Term Evolution (LTE)
Bandwidth
Smartphones
2016
1 Citation (Scopus)

A multiband 130nm CMOS low noise amplifier for LTE bands

Kamsani, N. A., Thangasamy, V., Bukhori, M. F. & Shafie, S., 27 Jan 2016, Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc., p. 106-110 5 p. 7394074

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low noise amplifiers
local thermodynamic equilibrium
low noise
CMOS
amplifiers

A multiband 130nm CMOS second order band pass filter for LTE bands

Kamsani, N. A., Thangasamy, V., Bukhori, M. F. & Shafie, S., 27 Jan 2016, Proceeding - 2015 IEEE International Circuits and Systems Symposium, ICSyS 2015. Institute of Electrical and Electronics Engineers Inc., p. 100-105 6 p. 7394073

Research output: Chapter in Book/Report/Conference proceedingConference contribution

local thermodynamic equilibrium
Bandpass filters
bandpass filters
Resonant circuits
CMOS
university
student
performance
Group
Student performance

Multimode multiband power amplifier with tapped transformer for efficiency enhancement in low power mode

Thangasamy, V., Thiruchelvam, V., Hamidon, M. N., Hashim, S. J., Bukhori, M. F., Yusoff, Z. & Kamsani, N. A., 21 Sep 2016, 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-September. p. 268-271 4 p. 7573643

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Power amplifiers
Transistors
Bandwidth
Smartphones
2 Citations (Scopus)

Wireless power transfer with on-chip inductor and class-E power amplifier for implant medical device applications

Thangasamy, V., Kamsani, N. A., Thiruchelvam, V., Hamidon, M. N., Hashim, S. J., Bukhori, M. F. & Yusoff, Z., 7 Apr 2016, 2015 IEEE Student Conference on Research and Development, SCOReD 2015. Institute of Electrical and Electronics Engineers Inc., p. 422-426 5 p. 7449370

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Power amplifiers
Pacemakers
Piercing
Brain computer interface
Orthopedics
2015
6 Citations (Scopus)

A low power multiplexer based pass transistor logic full adder

Kamsani, N. A., Thangasamy, V., Hashim, S. J., Yusoff, Z., Bukhori, M. F. & Hamidon, M. N., 11 Dec 2015, RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 7354994

Research output: Chapter in Book/Report/Conference proceedingConference contribution

transistor logic
Adders
adding circuits
Transistors
electric potential

A multiband CMOS RF power amplifier with double secondary transformer matching

Thangasamy, V., Kamsani, N. A., Hamidon, M. N., Hashim, S. J., Bukhori, M. F., Yusoff, Z. & Thiruchelvam, V., 1 Dec 2015, In : International Journal of Applied Engineering Research. 10, 24, p. 44341-44346 6 p.

Research output: Contribution to journalArticle

Power amplifiers
Bandwidth
Frequency bands
Specifications
Air
2 Citations (Scopus)

Characterization of NBTI-induced positive charges in 16 nm FinFET

Hussin, H., Soin, N., Wan Muhamad Hatta, S. & Bukhori, M. F., 30 Sep 2015, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., p. 365-368 4 p. 7285126

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Charge density
Hole traps
Threshold voltage
Electron energy levels
Energy gap
2 Citations (Scopus)

Development of the online student attendance monitoring system (SAMS™) based on QR-codes and mobile devices

Abd Rahni, A. A., Zainal, N., Zainal Adna, M. F., Othman, N. E. & Bukhori, M. F., 1 May 2015, In : Journal of Engineering Science and Technology. 10, Spec. Issue 2 on UKM Teaching and Learning Congress 2013, May..., p. 28-40 13 p.

Research output: Contribution to journalArticle

Mobile devices
Students
Monitoring
Feedback
Smartphones

Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

Hussin, H., Soin, N., Muhamad Hatta, S. W. & Bukhori, M. F., 19 Nov 2015, IOP Conference Series: Materials Science and Engineering. 1 ed. Institute of Physics Publishing, Vol. 99. 012015

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
MOSFET devices
Threshold voltage
Degradation
4-nitrobenzylthioinosine
2 Citations (Scopus)

Low power 18T pass transistor logic ripple carry adder

Thangasamy, V., Kamsani, N. A., Hamidon, M. N., Hashim, S. J., Yusoff, Z. & Bukhori, M. F., 3 Mar 2015, In : IEICE Electronics Express. 12, 6, p. 1-12 12 p.

Research output: Contribution to journalArticle

Carry logic
transistor logic
Adders
ripples
CMOS
2014
1 Citation (Scopus)

An overview of RF power amplifier techniques and effect of transistor scaling on its design parameters

Thangasamy, V., Ain Kamsani, N., Hamidon, M. & Bukhori, M. F., 2014, In : International Journal of Applied Engineering Research. 9, 2, p. 257-276 20 p.

Research output: Contribution to journalArticle

Radio frequency amplifiers
Power amplifiers
Transistors
Transceivers
Semiconductor materials
4 Citations (Scopus)

Effects of gate stack structural and process defectivity on high- k dielectric dependence of nbti reliability in 32 nm technology node PMOSFETs

Hussin, H., Soin, N., Bukhori, M. F., Wan Muhamad Hatta, S. & Abdul Wahab, Y., 2014, In : Scientific World Journal. 2014, 490829.

Research output: Contribution to journalArticle

Technology
Degradation
degradation
Temperature
trapping

Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model

Hussin, H., Soin, N. & Bukhori, M. F., 2014, Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, Vol. 2. p. 463-466 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Threshold voltage
Transistors
Oxides
4-nitrobenzylthioinosine
Negative bias temperature instability
4 Citations (Scopus)
MOSFET devices
metal oxide semiconductors
field effect transistors
recovery
Recovery

Promising integrated two-stage NBTI model for accurate lifetime prediction of nano-scale HKMG PMOSFETs

Hussin, H., Soin, N. & Bukhori, M. F., 2014, Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, Vol. 2. p. 467-470 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Degradation
Defects
Electric potential
Electron energy levels
Temperature
2013

A study using two stage NBTI model for 32 nm high-k PMOSFET

Hussin, H., Muhamad, M., Abdul Wahab, Y., Shahabuddin, S., Soin, N. & Bukhori, M. F., 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628108

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kinetics
Hole traps
Energy barriers
Threshold voltage
Passivation
2012
1 Citation (Scopus)

Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models

Bukhori, M. F., Kamsani, N. A., Asenov, A. & Nayan, N. A., Nov 2012, In : Microelectronics Journal. 43, 11, p. 793-801 9 p.

Research output: Contribution to journalArticle

degradation
Degradation
Charge trapping
figure of merit
specifications
15 Citations (Scopus)

Impact of individual charged gate-oxide defects on the entire I D-V G characteristic of nanoscaled FETs

Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, P. J., Grasser, T., Asenov, A. & Groeseneken, G., 2012, In : IEEE Electron Device Letters. 33, 6, p. 779-781 3 p., 6196171.

Research output: Contribution to journalArticle

Field effect transistors
Oxides
Defects
59 Citations (Scopus)

Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Mitard, J., Ragnarsson, L. Å., Witters, L., Chiarella, T., Togo, M., Horiguchi, N., Groeseneken, G., Bukhori, M. F., Grasser, T. & Asenov, A., 2012, IEEE International Reliability Physics Symposium Proceedings. 6241841

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Defects
Oxides
Transistors
Doping (additives)
31 Citations (Scopus)

The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes

Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, P. J., Bukhori, M. F., Asenov, A., Schwarz, B., Bina, M., Grasser, T. & Groeseneken, G., 2012, IEEE International Reliability Physics Symposium Proceedings. 6241839

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Threshold voltage
Circuit simulation
Doping (additives)
Degradation
2010
8 Citations (Scopus)

'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions

Bukhori, M. F., Grasser, T., Kaczer, B., Hans, R. & Asenov, A., 2010, IEEE International Integrated Reliability Workshop Final Report. p. 76-79 4 p. 5706490

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
Critical currents
Doping (additives)
Electric potential
37 Citations (Scopus)
Charge trapping
Threshold voltage
Transistors
Doping (additives)
Degradation
2009
14 Citations (Scopus)

Simulation of statistical aspects of reliability in nano CMOS transistors

Bukhori, M. F., Brown, A. R., Roy, S. & Asenov, A., 2009, IEEE International Integrated Reliability Workshop Final Report. p. 82-85 4 p. 5383028

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistors
Charge trapping
Threshold voltage
Doping (additives)
Defects
2008
31 Citations (Scopus)

Advanced simulation of statistical variability and reliability in nano CMOS transistors

Asenov, A., Roy, S., Brown, R. A., Roy, G., Alexander, C., Riddet, C., Millar, C., Cheng, B., Martinez, A., Seoane, N., Reid, D., Bukhori, M. F., Wang, X. & Kovac, U., 2008, Technical Digest - International Electron Devices Meeting, IEDM. 4796712

Research output: Chapter in Book/Report/Conference proceedingConference contribution

CMOS
Transistors
transistors
simulation
23 Citations (Scopus)

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Bukhori, M. F., Roy, S. & Asenov, A., Aug 2008, In : Microelectronics Reliability. 48, 8-9, p. 1549-1552 4 p.

Research output: Contribution to journalArticle

Threshold voltage
threshold voltage
field effect transistors
Doping (additives)
Charge trapping
1 Citation (Scopus)

Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants

Bukhori, M. F., Roy, S. & Asenov, A., 2008, ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon. p. 171-174 4 p. 4527166

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Doping (additives)
Charge trapping
Threshold voltage
Geometry
Electrons
2007
9 Citations (Scopus)

Optical cross add and drop multiplexer (OXADM) in CWDM ring network

Ab Rahman, M. S., Ehsan, A. A., Hussin, H., Bukhori, M. F. & Shaari, S., 2007, In : Journal of Optical Communications. 28, 3, p. 201-205 5 p.

Research output: Contribution to journalArticle

Multiplexing
Wavelength
Optical switches
rings
Optical devices
1 Citation (Scopus)

OXADM: Feasibility of network security and migration

Ab Rahman, M. S., Ibrahim, W. N. W., Bukhori, M. F. & Shaari, S., 2007, 2007 Asia-Pacific Conference on Applied Electromagnetics Proceedings, APACE2007. 4603892

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Network security
Fiber optic networks
Restoration
Chemical activation
Topology