• 2109 Citations
  • 19 h-Index
1993 …2019
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Substrates Engineering & Materials Science
Etching Engineering & Materials Science

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Research Output 1993 2019

Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition

Kakkerla, R. K., Anandan, D., Singh, S. K., Yu, H. W., Lee, C. T., Dee, C. F., Yeop Majlis, B. & Chang, E. Y., 1 Jan 2019, In : Applied Physics Express. 12, 1, 015502.

Research output: Contribution to journalArticle

Indium antimonides
indium antimonides
Antimony compounds
Gold compounds
antimony compounds

A critical review of the effects of fluid dynamics on graphene growth in atmospheric pressure chemical vapor deposition

Fauzi, F. B., Ismail, E., Ani, M. H., Syed Abu Bakar, S. N., Mohamed, M. A., Yeop Majlis, B., Md Din, M. F. & Azam Mohd Abid, M. A., 8 Mar 2018, (Accepted/In press) In : Journal of Materials Research. p. 1-21 21 p.

Research output: Contribution to journalArticle

Graphite
fluid dynamics
Fluid dynamics
Graphene
Atmospheric pressure

A critical review of the effects of fluid dynamics on graphene growth in atmospheric pressure chemical vapor deposition – CORRIGENDUM

Fauzi, F. B., Ismail, E., Ani, M. H., Syed Abu Bakar, S. N., Mohamed, M. A., Yeop Majlis, B., Md Din, M. F. & Azam Mohd Abid, M. A., 25 Mar 2018, (Accepted/In press) In : Journal of Materials Research. 1 p.

Research output: Contribution to journalArticle

fluid dynamics
Fluid dynamics
Graphene
Atmospheric pressure
Chemical vapor deposition

Activation energy of thermal oxidation germanium oxide on germanium substrates

Halim, N. A. A., Sahari, S. K., Hamzah, A. A., Yeop Majlis, B., Marini, S., Hasanah, L. & Kashif, M., 3 Oct 2018, 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-August. p. 169-172 4 p. 8481204

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium oxides
Germanium
Thermooxidation
Activation energy
Oxidation
1 Citations

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Lumbantoruan, F., Wu, C. H., Zheng, X. X., Singh, S. K., Dee, C. F., Yeop Majlis, B. & Chang, E. Y., 6 Jun 2018, In : Physica Status Solidi (A) Applications and Materials Science. 215, 11, 1700741.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Leakage currents
Field emission
Gates (transistor)